RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JTF51264HZ-1G6M1 4GB
Transcend Information JM2666HLB-8G 8GB
Compare
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Transcend Information JM2666HLB-8G 8GB
Overall score
Micron Technology 16JTF51264HZ-1G6M1 4GB
Overall score
Transcend Information JM2666HLB-8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
Reasons to consider
Transcend Information JM2666HLB-8G 8GB
Report a bug
Faster reading speed, GB/s
16.1
12.9
Average value in the tests
Faster write speed, GB/s
12.0
9.0
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Transcend Information JM2666HLB-8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
28
Read speed, GB/s
12.9
16.1
Write speed, GB/s
9.0
12.0
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2112
2920
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Transcend Information JM2666HLB-8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD34G16002 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
AMD R538G1601U2S-UO 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Samsung M471B5273CH0-CH9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Samsung M393B1K70QB0-CK0 8GB
SK Hynix HMA81GU6MFR8N-UH 8GB
A-DATA Technology DDR3 1600 4GB
A-DATA Technology AX4S2800316G18-B 16GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-3000C15-16GTZ 16GB
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMD32GX4M4B2133C10 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Kingston 99U5474-022.A00LF 2GB
EVGA 16G-D4-2800-MR 4GB
SK Hynix HYMP512U64CP8-Y5 1GB
Essencore Limited KD48GU880-36A180U 8GB
Report a bug
×
Bug description
Source link