RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M474A4G43MB1-CTD 32GB
Compare
Micron Technology 18HTF12872AY-800F1 1GB vs Samsung M474A4G43MB1-CTD 32GB
Overall score
Micron Technology 18HTF12872AY-800F1 1GB
Overall score
Samsung M474A4G43MB1-CTD 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 18HTF12872AY-800F1 1GB
Report a bug
Faster reading speed, GB/s
4
19.7
Average value in the tests
Faster write speed, GB/s
2,107.0
14.8
Average value in the tests
Reasons to consider
Samsung M474A4G43MB1-CTD 32GB
Report a bug
Below the latency in the PassMark tests, ns
33
58
Around -76% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M474A4G43MB1-CTD 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
33
Read speed, GB/s
4,025.3
19.7
Write speed, GB/s
2,107.0
14.8
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
670
3671
Micron Technology 18HTF12872AY-800F1 1GB RAM comparisons
Apacer Technology 78.0AGA0.9K5 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
Samsung M474A4G43MB1-CTD 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F4-4500C19-8GTZKKE 8GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Samsung M393B5170FH0-CK0 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA851S6DJR6N-VK 4GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston K1CXP8-MIE 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 99U5663-003.A00G 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Kingston 9905403-011.A03LF 2GB
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
AMD R5316G1609U2K 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Qimonda 72T128420EFA3SB2 1GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
Report a bug
×
Bug description
Source link