RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Report a bug
Below the latency in the PassMark tests, ns
20
51
Around -155% lower latency
Faster reading speed, GB/s
18.9
15.6
Average value in the tests
Faster write speed, GB/s
12.6
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
20
Read speed, GB/s
15.6
18.9
Write speed, GB/s
11.8
12.6
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
3244
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471A1K43DB1-CTD 8GB
Corsair CMT16GX4M2K4000C19 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMW32GX4M4C3200C16 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Samsung M378B5773CH0-CH9 2GB
Samsung M474A2K43BB1-CRC 16GB
Kingston ACR512X64D3S13C9G 4GB
Kingston K6VDX7-HYD 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BL8G32C16U4W.8FE 8GB
Samsung M471B5773DH0-CK0 2GB
Essencore Limited KD48GU881-26N190A 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3600C16-32GTZR 32GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Jinyu CL16-16-16 D4-2400 8GB
Corsair CMX8GX3M2A1600C11 4GB
G Skill Intl F4-4133C19-4GTZ 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Kingston ACR256X64D3S1333C9 2GB
Kllisre M378A5143EB2-CRC 4GB
Report a bug
×
Bug description
Source link