RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3733C17-16GTZKK 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
G Skill Intl F4-3733C17-16GTZKK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3733C17-16GTZKK 16GB
Report a bug
Below the latency in the PassMark tests, ns
19
51
Around -168% lower latency
Faster reading speed, GB/s
20.2
15.6
Average value in the tests
Faster write speed, GB/s
18.1
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
19
Read speed, GB/s
15.6
20.2
Write speed, GB/s
11.8
18.1
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
3905
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3733C17-16GTZKK 16GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5270CH0-CH9 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 99U5713-002.A00G 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Roa Logic BV W4U2666CX1-8G 8GB
Corsair CMV4GX3M1B1600C11 4GB
Kingston KHX2400C14S4/16G 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Samsung M471B5273DH0-CK0 4GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-3600C17-8GTZSW 8GB
SK Hynix HMT351U6BFR8C-H9 4GB
Patriot Memory (PDP Systems) PSD34G13332 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2400C15-8GTZRX 8GB
Samsung M471B5273EB0-CK0 4GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Kingston 9905403-515.A00LF 8GB
Kingston HP26D4U6D8ME-16X 16GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-4000C17-16GTZRB 16GB
Report a bug
×
Bug description
Source link