RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston KHX2133C13S4/4G 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Kingston KHX2133C13S4/4G 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Kingston KHX2133C13S4/4G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
14.8
Average value in the tests
Faster write speed, GB/s
11.8
11.2
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Kingston KHX2133C13S4/4G 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
51
Around -104% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston KHX2133C13S4/4G 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
25
Read speed, GB/s
15.6
14.8
Write speed, GB/s
11.8
11.2
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
2346
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston KHX2133C13S4/4G 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO1P24HC8T1-BPGS 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
SK Hynix HMA41GR7MFR4N-TF 8GB
Samsung M378B5673FH0-CH9 2GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9905734-059.A00G 16GB
Elpida EBE21UE8ACUA-8G-E 2GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-2666C15-8GRR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston X75V1H-MIE 32GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Team Group Inc. 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Report a bug
×
Bug description
Source link