RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Micron Technology CT8G4DFD8213.16FA2 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Micron Technology CT8G4DFD8213.16FA2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
11.9
Average value in the tests
Faster write speed, GB/s
11.8
10.2
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Micron Technology CT8G4DFD8213.16FA2 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
51
Around -65% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
31
Read speed, GB/s
15.6
11.9
Write speed, GB/s
11.8
10.2
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
2585
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology CT8G4DFD8213.16FA2 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston 9905630-031.A00G 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Samsung M3 78T2863QZS-CF7 1GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
Hexon Technology Pte Ltd HEXON 1GB
Transcend Information TS512MLH64V4H 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Corsair CMX8GX3M2B1600C9 4GB
Kingston KHX1600C9D3/4GX 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Corsair CMT16GX4M2C3000C15 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M393A5143DB0-CRC 4GB
AMD AE34G1601U1 4GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Kingston 99U5469-045.A00LF 4GB
Kingston KMKYF9-MID 8GB
SK Hynix DDR2 800 2G 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
Report a bug
×
Bug description
Source link