RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M386A2G40DB0-CPB 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M386A2G40DB0-CPB 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Samsung M386A2G40DB0-CPB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
10
Average value in the tests
Faster write speed, GB/s
11.8
8.1
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Samsung M386A2G40DB0-CPB 16GB
Report a bug
Below the latency in the PassMark tests, ns
45
51
Around -13% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M386A2G40DB0-CPB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
45
Read speed, GB/s
15.6
10.0
Write speed, GB/s
11.8
8.1
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
2414
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M386A2G40DB0-CPB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C15-8GTZKO 8GB
Qimonda 72T128420EFA3SB2 1GB
Kingston ACR26D4S9S8HJ-8 8GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-2400C15-16GVR 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Cortus SAS 8ATF1G64AZ-2G6E1 8GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2400C17-16GSXF 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Gloway International (HK) STK4U2400D17161C 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M386A2G40DB0-CPB 16GB
Kingston 99U5471-030.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Kingston KHX318C10FR/8G 8GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Kingston KF552C40-16 16GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Kingston 9905403-090.A01LF 4GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-2133C15-4GRB 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
G Skill Intl F4-3000C14-16GVK 16GB
Report a bug
×
Bug description
Source link