RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F8G64CB8HC9N-DI 8GB
SK Hynix HMA851U6CJR6N-VK 4GB
Compare
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs SK Hynix HMA851U6CJR6N-VK 4GB
Overall score
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Overall score
SK Hynix HMA851U6CJR6N-VK 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Report a bug
Reasons to consider
SK Hynix HMA851U6CJR6N-VK 4GB
Report a bug
Below the latency in the PassMark tests, ns
32
37
Around -16% lower latency
Faster reading speed, GB/s
16.8
13.9
Average value in the tests
Faster write speed, GB/s
12.1
8.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2F8G64CB8HC9N-DI 8GB
SK Hynix HMA851U6CJR6N-VK 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
32
Read speed, GB/s
13.9
16.8
Write speed, GB/s
8.6
12.1
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2395
2641
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM comparisons
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
SK Hynix HMA851U6CJR6N-VK 4GB RAM comparisons
G Skill Intl F4-3600C19-8GSXWB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2F8G64CB8HC9N-DI 8GB
SK Hynix HMA851U6CJR6N-VK 4GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3333C16-4GRRD 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Samsung M471B5273CH0-CH9 4GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
Samsung M378A1G43DB0-CPB 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMK16GX4M4A2400C14 4GB
Kingston 99U5429-014.A00LF 4GB
Corsair CMK128GX4M8A2400C14 16GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Kingston K531R8-MIN 4GB
SK Hynix HMA42GR7AFR4N-UH 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Samsung M378A1K43EB2-CWE 8GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Report a bug
×
Bug description
Source link