RAM comparison Nanya Technology M2X4G64CB88CHN-DG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Overall score

Nanya Technology M2X4G64CB88CHN-DG 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Nanya Technology M2X4G64CB88CHN-DG 4GB

Below the latency in the PassMark tests, ns

27 122

Around 78% lower latency
Faster reading speed, GB/s

12.8 9.4

Average value in the tests
Faster write speed, GB/s

8.0 5.8

Average value in the tests

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Complete list of technical specifications

Nanya Technology M2X4G64CB88CHN-DG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2083 1411

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns