RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88A2B-3C 512MB
G Skill Intl F4-3200C16-8GTZR 8GB
Compare
Nanya Technology M2Y51264TU88A2B-3C 512MB vs G Skill Intl F4-3200C16-8GTZR 8GB
Overall score
Nanya Technology M2Y51264TU88A2B-3C 512MB
Overall score
G Skill Intl F4-3200C16-8GTZR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88A2B-3C 512MB
Report a bug
Faster write speed, GB/s
874.3
14.6
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C16-8GTZR 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
81
Around -189% lower latency
Faster reading speed, GB/s
18.2
1
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88A2B-3C 512MB
G Skill Intl F4-3200C16-8GTZR 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
81
28
Read speed, GB/s
1,885.7
18.2
Write speed, GB/s
874.3
14.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
277
3546
Nanya Technology M2Y51264TU88A2B-3C 512MB RAM comparisons
Kingston 99U5315-012.A00LF 512MB
Kingston 9905598-009.A00G 8GB
G Skill Intl F4-3200C16-8GTZR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M391B5673EH1-CH9 2GB
Corsair CM4X8GF3000C15K4 8GB
Nanya Technology M2Y51264TU88A2B-3C 512MB
G Skill Intl F4-3200C16-8GTZR 8GB
Samsung M471A1K43DB1-CTD 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMD16GX4M4B3400C16 4GB
Kingston 9905471-001.A01LF 2GB
Kingston KHX3466C16D4/8GX 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston XN205T-HYD2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3800C14-16GTZN 16GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMD16GX4M2B2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Report a bug
×
Bug description
Source link