RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3200C16-8GVS 8GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs G Skill Intl F4-3200C16-8GVS 8GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
G Skill Intl F4-3200C16-8GVS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
17.4
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C16-8GVS 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
54
Around -93% lower latency
Faster write speed, GB/s
12.6
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3200C16-8GVS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
28
Read speed, GB/s
3,573.5
17.4
Write speed, GB/s
1,308.1
12.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
371
3085
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
G Skill Intl F4-3200C16-8GVS 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DPT5MK8-TATP 2GB
Kingston XJ69DF-MIE 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Team Group Inc. Vulcan-1600 4GB
SK Hynix HMA42GR7MFR4N-TF 16GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology GD2.1527WC.001 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston 9905598-009.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Gloway International (HK) STK4U2400D15082C 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
DSL Memory D4SH1G081SH26A-C 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
Report a bug
×
Bug description
Source link