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Nanya Technology NT1GT64U88D0BY-AD 1GB
Samsung M393A5143DB0-CPB 4GB

Nanya Technology NT1GT64U88D0BY-AD 1GB vs Samsung M393A5143DB0-CPB 4GB

Overall score
star star star star star
Nanya Technology NT1GT64U88D0BY-AD 1GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

Overall score
star star star star star
Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB

Differences Specifications Comments

Differences

Nanya Technology NT1GT64U88D0BY-AD 1GB Reasons to consider
Nanya Technology NT1GT64U88D0BY-AD 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 10.4
    Average value in the tests
Samsung M393A5143DB0-CPB 4GB Reasons to consider
Samsung M393A5143DB0-CPB 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    54 left arrow 68
    Around -26% lower latency
  • Faster write speed, GB/s
    8.5 left arrow 2,636.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT1GT64U88D0BY-AD 1GB
Samsung M393A5143DB0-CPB 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    68 left arrow 54
  • Read speed, GB/s
    4,540.8 left arrow 10.4
  • Write speed, GB/s
    2,636.8 left arrow 8.5
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    827 left arrow 2226

Nanya Technology NT1GT64U88D0BY-AD 1GB RAM comparisons

SK Hynix HYMP125U72CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB

Samsung M393A5143DB0-CPB 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology F6451U66G1600G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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