RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
Compare
Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
Overall score
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Report a bug
Faster reading speed, GB/s
4
13.6
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
72
Around -148% lower latency
Faster write speed, GB/s
9.9
1,938.7
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
72
29
Read speed, GB/s
4,241.0
13.6
Write speed, GB/s
1,938.7
9.9
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
677
2419
Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM comparisons
Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB RAM comparisons
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
Kingston 99P5474-014.A00LF 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
AMD AE34G1601U1 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMSX64GX4M4A2666C18 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
A-DATA Technology AM1L16BC4R1-B1HS 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9905474-019.A00LF 2GB
Corsair CMR32GX4M4D3200C16 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston 9965516-430.A00G 16GB
Avant Technology J641GU42J5213ND 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston HP24D4U7S8MH-8 8GB
Samsung M3 78T2863QZS-CF7 1GB
Hyundai Inc AR32C16S8K2HU416R 8GB
Samsung M393B2G70BH0-YK0 16GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Report a bug
×
Bug description
Source link