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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Overall score
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Overall score
star star star star star
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Differences Specifications Comments

Differences

Nanya Technology NT2GT64U8HD0BY-AD 2GB Reasons to consider
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 10.7
    Average value in the tests
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB Reasons to consider
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    49 left arrow 64
    Around -31% lower latency
  • Faster write speed, GB/s
    8.6 left arrow 2,256.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    64 left arrow 49
  • Read speed, GB/s
    4,651.3 left arrow 10.7
  • Write speed, GB/s
    2,256.8 left arrow 8.6
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    837 left arrow 2504

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM comparisons

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Memory RAM
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Neo Forza GKE160SO204808-3200 16GB
Neo Forza GKE160SO204808-3200 16GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
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Wilk Elektronik S.A. GR2133S464L15/16G 16GB
Memory RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C16-8GSXFB 8GB
G Skill Intl F4-3200C16-8GSXFB 8GB
Memory RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFS824A.M8FD 8GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
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Smart Modular SH564128FH8NZQNSCG 4GB
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G Skill Intl F4-3000C15-4GTZ 4GB
G Skill Intl F4-3000C15-4GTZ 4GB
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Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Memory RAM
Nanya Technology M2X4G64CB88CHN-DG 4GB
Nanya Technology M2X4G64CB88CHN-DG 4GB
Kingston 9905678-044.A00G 8GB
Kingston 9905678-044.A00G 8GB
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A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
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Samsung M471A1G44AB0-CWE 8GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
Memory RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Crucial Technology BLS16G4D30AESE.M16FE 16GB
Memory RAM
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Samsung M471B5673FH0-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
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Memory RAM
Samsung M391B5673EH1-CH9 2GB
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Corsair MK16GX4M2B3200C16 8GB
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A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
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