RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Compare
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Micron Technology 4ATF1G64HZ-3G2E2 8GB
Overall score
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Overall score
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Report a bug
Faster reading speed, GB/s
4
15.8
Average value in the tests
Faster write speed, GB/s
2,256.8
11.0
Average value in the tests
Reasons to consider
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Report a bug
Below the latency in the PassMark tests, ns
49
64
Around -31% lower latency
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
64
49
Read speed, GB/s
4,651.3
15.8
Write speed, GB/s
2,256.8
11.0
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
837
2534
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM comparisons
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB RAM comparisons
Samsung M393B1K70CH0-CH9 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gloway International Co. Ltd. TYA4U2666D19081C 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Corsair CMD16GX3M2A1866C9 8GB
Samsung M393A1G43DB0-CPB 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-2400C17-16GIS 16GB
Crucial Technology CT25664AA800.M16FG 2GB
Kingston KHX3466C19D4/16G 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMW128GX4M4D3000C16 32GB
Kingston 9965525-018.A00LF 4GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology CT8G4DFS8266.M8FD 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905701-022.A00G 16GB
A-DATA Technology DQVE1908 512MB
Team Group Inc. Team-Elite-2400 4GB
PNY Electronics PNY 2GB
G Skill Intl F4-4000C19-16GTZSW 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-2933C14-8GFX 8GB
Report a bug
×
Bug description
Source link