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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M378A2K43BB1-CPB 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Samsung M378A2K43BB1-CPB 16GB

Overall score
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Overall score
star star star star star
Samsung M378A2K43BB1-CPB 16GB

Samsung M378A2K43BB1-CPB 16GB

Differences Specifications Comments

Differences

Nanya Technology NT2GT64U8HD0BY-AD 2GB Reasons to consider
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 14.9
    Average value in the tests
  • Faster write speed, GB/s
    2,256.8 left arrow 10.2
    Average value in the tests
Samsung M378A2K43BB1-CPB 16GB Reasons to consider
Samsung M378A2K43BB1-CPB 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 64
    Around -83% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M378A2K43BB1-CPB 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    64 left arrow 35
  • Read speed, GB/s
    4,651.3 left arrow 14.9
  • Write speed, GB/s
    2,256.8 left arrow 10.2
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    837 left arrow 2768

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM comparisons

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Samsung M378A2K43BB1-CPB 16GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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