RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C14-32GVK 32GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs G Skill Intl F4-3200C14-32GVK 32GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
G Skill Intl F4-3200C14-32GVK 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C14-32GVK 32GB
Report a bug
Below the latency in the PassMark tests, ns
34
42
Around -24% lower latency
Faster reading speed, GB/s
18.5
9.7
Average value in the tests
Faster write speed, GB/s
15.0
6.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C14-32GVK 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
34
Read speed, GB/s
9.7
18.5
Write speed, GB/s
6.0
15.0
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1396
3604
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
G Skill Intl F4-3200C14-32GVK 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
Samsung M471B5273CH0-CH9 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston 9965662-016.A00G 16GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
SpecTek Incorporated PSD34G13332 4GB
Avant Technology W6451U66J5213ND 4GB
Samsung M393B1G70BH0-CK0 8GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5713-003.A00G 4GB
Samsung M378B5773CH0-CH9 2GB
SK Hynix HMA851S6CJR6N-VK 4GB
Samsung 1600 CL10 Series 8GB
Essencore Limited KD4AGU880-36A180X 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M393A1K43BB0-CRC 8GB
Samsung 1600 CL10 Series 8GB
Avant Technology W641GU67J7240N8 8GB
Samsung M3 78T6553CZ3-CE6 512MB
Crucial Technology BLT4G4D30AETA.K8FD 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Transcend Information JM3200HLG-8G 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston CBD24D4U7S8MA-8 8GB
Report a bug
×
Bug description
Source link