RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C16-16GTZSW 16GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs G Skill Intl F4-3200C16-16GTZSW 16GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
G Skill Intl F4-3200C16-16GTZSW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C16-16GTZSW 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
42
Around -50% lower latency
Faster reading speed, GB/s
18.2
9.7
Average value in the tests
Faster write speed, GB/s
14.3
6.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C16-16GTZSW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
28
Read speed, GB/s
9.7
18.2
Write speed, GB/s
6.0
14.3
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1396
3663
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
G Skill Intl F4-3200C16-16GTZSW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5584-017.A00LF 4GB
Kingston XJV223-MIE-NX 16GB
Corsair CMD16GX3M4A2666C11 4GB
Samsung M471A2K43BB1-CTD 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingston ACR256X64D3S1333C9 2GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMSX16GX4M1A2666C18 16GB
Kingston 9905403-447.A00LF 4GB
Kingston KHX3200C18D4/4G 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KHX3000C16D4/32GX 32GB
Corsair CMZ16GX3M2A2400C10 8GB
Panram International Corporation D4N2666PS-16G 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-2800C16-8GVR 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT16G4DFRA32A.C8FB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A5644EB0-CPB 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M393A1K43BB0-CRC 8GB
AMD R538G1601U2S 8GB
Corsair CMD128GX4M8A2666C15 16GB
Report a bug
×
Bug description
Source link