RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Mushkin MR[A/B]4U266GHHF16G 16GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Mushkin MR[A/B]4U266GHHF16G 16GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Mushkin MR[A/B]4U266GHHF16G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
Mushkin MR[A/B]4U266GHHF16G 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
42
Around -83% lower latency
Faster reading speed, GB/s
18
9.7
Average value in the tests
Faster write speed, GB/s
13.1
6.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Mushkin MR[A/B]4U266GHHF16G 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
23
Read speed, GB/s
9.7
18.0
Write speed, GB/s
6.0
13.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1396
3211
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Mushkin MR[A/B]4U266GHHF16G 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQKD1A08 1GB
Samsung M471A2K43CB1-CTCT 16GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-4400C18-8GTRS 8GB
Kingston 9905469-143.A00LF 4GB
Apacer Technology GD2.2229BH.001 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3600C18-32GTZN 32GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
Samsung M393B5270CH0-CH9 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C16-16GTZR 16GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3600C16-8GTZKW 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-3600C18-16GTZR 16GB
Apacer Technology 78.01G86.9H50C 1GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
Samsung M471B1G73QH0-YK0 8GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A2K43BB1-CRC 16GB
Report a bug
×
Bug description
Source link