RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Samsung V-GeN D4S16GL26A8TL6 16GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Samsung V-GeN D4S16GL26A8TL6 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
Samsung V-GeN D4S16GL26A8TL6 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
42
Around -31% lower latency
Faster reading speed, GB/s
16
9.7
Average value in the tests
Faster write speed, GB/s
13.4
6.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
32
Read speed, GB/s
9.7
16.0
Write speed, GB/s
6.0
13.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1396
1897
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ81UG8BBU0-GN-F 8GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Kingston 99U5584-001.A00LF 4GB
Samsung M378A1K43CB2-CTD 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4000C16-16GTRSA 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-2666C18-32GTZN 32GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-2666C15-4GRR 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-3200C14-8GVK 8GB
Samsung M391B5673EH1-CH9 2GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Kingston 99U5474-013.A00LF 2GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Report a bug
×
Bug description
Source link