RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Compare
Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Overall score
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Report a bug
Faster reading speed, GB/s
10.6
10.2
Average value in the tests
Faster write speed, GB/s
7.8
7.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
42
Around -20% lower latency
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
35
Read speed, GB/s
10.6
10.2
Write speed, GB/s
7.8
7.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2150
2124
Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM comparisons
Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BA1339.C16F 4GB
SK Hynix HMA81GU6JJR8N-VK 8GB
A-DATA Technology DQVE1908 512MB
Panram International Corporation PUD42400C168GVS 8GB
Qimonda 64T128020EDL2.5C2 1GB
Kingston 9965684-005.A00G 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-4800C18-8GTRS 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 16G3200CL22 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avant Technology J642GU42J5213NF 16GB
Kllisre KRE-D3U1600M/8G 8GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KHX2666C15D4/4G 4GB
Report a bug
×
Bug description
Source link