RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Compare
Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Overall score
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Overall score
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Report a bug
Below the latency in the PassMark tests, ns
42
72
Around 42% lower latency
Reasons to consider
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Report a bug
Faster reading speed, GB/s
15.3
10.6
Average value in the tests
Faster write speed, GB/s
8.0
7.8
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
72
Read speed, GB/s
10.6
15.3
Write speed, GB/s
7.8
8.0
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2150
1593
Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM comparisons
Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-437.A01LF 4GB
Golden Empire CL18-22-22 D4-3600 16GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M471A4G43MB1-CTD 32GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Kingston HX318C10FK/4 4GB
Kingston 9905744-024.A00G 16GB
Corsair CMY8GX3M2A2666C10 4GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-3200C14-16GVK 16GB
Corsair CML16GX3M2A1600C10 8GB
Samsung M393A2K43BB1-CRC 16GB
A-DATA Technology DDR2 800G 2GB
Kingston 9905700-053.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-2400C15-16GTZRX 16GB
Samsung M393B2G70BH0-CH9 16GB
Samsung M386A8K40BMB-CPB 64GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-3600C17-16GTZKK 16GB
Kingston 9965662-016.A00G 16GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3000C15-8GRKB 8GB
Report a bug
×
Bug description
Source link