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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A1K43BB0-CPB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Samsung M471A1K43BB0-CPB 8GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Overall score
star star star star star
Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

Differences Specifications Comments

Differences

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 38
    Around 8% lower latency
  • Faster reading speed, GB/s
    13.7 left arrow 13.4
    Average value in the tests
  • Faster write speed, GB/s
    9.6 left arrow 9.3
    Average value in the tests
Samsung M471A1K43BB0-CPB 8GB Reasons to consider
Samsung M471A1K43BB0-CPB 8GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A1K43BB0-CPB 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 38
  • Read speed, GB/s
    13.7 left arrow 13.4
  • Write speed, GB/s
    9.6 left arrow 9.3
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2312 left arrow 2298

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons

SK Hynix HMT351R7EFR8C-RD 4GB
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Samsung M471A1K43BB0-CPB 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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