RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMR5040ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Compare
Ramaxel Technology RMR5040ED58E9W1600 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Overall score
Ramaxel Technology RMR5040ED58E9W1600 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMR5040ED58E9W1600 4GB
Report a bug
Below the latency in the PassMark tests, ns
43
45
Around 4% lower latency
Faster reading speed, GB/s
13.2
6.9
Average value in the tests
Faster write speed, GB/s
9.3
6.3
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Ramaxel Technology RMR5040ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
45
Read speed, GB/s
13.2
6.9
Write speed, GB/s
9.3
6.3
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2285
1499
Ramaxel Technology RMR5040ED58E9W1600 4GB RAM comparisons
G Skill Intl F3-1600C11-8GISL 8GB
A-DATA Technology DDR4 4133 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB RAM comparisons
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMK64GX4M8A2133C13 8GB
Samsung M395T2863QZ4-CF76 1GB
Essencore Limited IM44GU48N26-GIIHA0 4GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3000C16-8GSXFB 8GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3200C14-16GFX 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KF3600C18D4/16GX 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMK64GX4M4A2400C16 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston 9905630-039.A00G 16GB
Kingston 9965525-140.A00LF 8GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Strontium EVMT8G1600U86S 8GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Kingston K1N7HK-ELC 2GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Report a bug
×
Bug description
Source link