RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMT3160ED58E9W1600 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Compare
Ramaxel Technology RMT3160ED58E9W1600 4GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Overall score
Ramaxel Technology RMT3160ED58E9W1600 4GB
Overall score
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMT3160ED58E9W1600 4GB
Report a bug
Below the latency in the PassMark tests, ns
40
59
Around 32% lower latency
Reasons to consider
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Report a bug
Faster reading speed, GB/s
17.2
12.3
Average value in the tests
Faster write speed, GB/s
9.7
7.8
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Ramaxel Technology RMT3160ED58E9W1600 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
59
Read speed, GB/s
12.3
17.2
Write speed, GB/s
7.8
9.7
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1806
2181
Ramaxel Technology RMT3160ED58E9W1600 4GB RAM comparisons
AMD R538G1601S2LS 8GB
Kingston 9905678-023.A00G 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C19-16GSXW 16GB
A-DATA Technology VDQVE1B16 2GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMW16GX4M2K4000C19 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Kingston MSI16D3LS1MNG/8G 8GB
Samsung M471A1K43BB1-CTD 8GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMU32GX4M4D3000C16 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9905630-063.A00G 16GB
SK Hynix HYMP512U64CP8-Y5 1GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
AMD R5316G1609U2K 8GB
Corsair CMD64GX4M8X3800C19 8GB
SK Hynix DDR2 800 2G 2GB
SK Hynix HMA41GR7MFR4N-TF 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Mushkin 99[2/7/4]192F 4GB
Report a bug
×
Bug description
Source link