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Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M378A1K43EB2-CWE 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Samsung M378A1K43EB2-CWE 8GB

Overall score
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Differences Specifications Comments

Differences

Ramaxel Technology RMT3170EB68F9W1600 4GB Reasons to consider
Ramaxel Technology RMT3170EB68F9W1600 4GB
Report a bug
Samsung M378A1K43EB2-CWE 8GB Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 43
    Around -30% lower latency
  • Faster reading speed, GB/s
    17.6 left arrow 11.4
    Average value in the tests
  • Faster write speed, GB/s
    12.0 left arrow 7.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M378A1K43EB2-CWE 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 33
  • Read speed, GB/s
    11.4 left arrow 17.6
  • Write speed, GB/s
    7.7 left arrow 12.0
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    1823 left arrow 2910

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Samsung M378A1K43EB2-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
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