RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology RMB4GB58BCA3-13HC 4GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Compare
Ramos Technology RMB4GB58BCA3-13HC 4GB vs Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Overall score
Ramos Technology RMB4GB58BCA3-13HC 4GB
Overall score
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramos Technology RMB4GB58BCA3-13HC 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
26
Around 12% lower latency
Reasons to consider
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Report a bug
Faster reading speed, GB/s
14.6
11.6
Average value in the tests
Faster write speed, GB/s
11.8
5.6
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Ramos Technology RMB4GB58BCA3-13HC 4GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
26
Read speed, GB/s
11.6
14.6
Write speed, GB/s
5.6
11.8
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1751
3124
Ramos Technology RMB4GB58BCA3-13HC 4GB RAM comparisons
Ramos Technology RMB4GB584CA3-13HC 4GB
takeMS International AG TMS4GB364E081139EM 4GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB RAM comparisons
Samsung M395T2863QZ4-CF76 1GB
Samsung M471B5273CH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Ramos Technology RMB4GB58BCA3-13HC 4GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KTD3KX-MIB 8GB
Samsung M471B5273CH0-CH9 4GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Samsung M378A1K43EB2-CWE 8GB
Heoriady HX2666DT8G-TD 8GB
Corsair CM3X8GA2400C11Y2R 8GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Kingston 9965433-034.A00LF 4GB
Mushkin 99[2/7/4]204F 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD32GX4M4B3333C16 8GB
Kingston 9905403-447.A00LF 4GB
Kingston MSI24D4S7D8MHMH6 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
Kingston KVR16N11/8-SP 8GB
Apacer Technology 78.D2GG7.AU30B 16GB
Report a bug
×
Bug description
Source link