Samsung 1600 CL10 Series 8GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Samsung 1600 CL10 Series 8GB vs Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Differences

  • Below the latency in the PassMark tests, ns
    25 left arrow 27
    Around 7% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 14.4
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 9.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 27
  • Read speed, GB/s
    16.1 left arrow 14.4
  • Write speed, GB/s
    10.1 left arrow 9.2
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2575
RAM Latency Calculator
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