RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
30
Around 17% lower latency
Reasons to consider
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Report a bug
Faster write speed, GB/s
10.4
10.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
30
Read speed, GB/s
16.1
16.1
Write speed, GB/s
10.1
10.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2764
2479
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D082-805G 2GB
SK Hynix HMA451U7AFR8N-TF 4GB
Kingston 99U5471-056.A00LF 8GB
Kingston 9905643-009.A00G 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
G Skill Intl F4-3200C16-8GIS 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMD16GX4M2B2400C10 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CM4X32GC3200C16K2E 32GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Kingston KHX1866C9D3/8GX 8GB
Kingston KF3600C18D4/32GX 32GB
Samsung M471B5273DH0-CK0 4GB
Kingston 9905663-021.A00G 16GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
G Skill Intl F4-3200C16-8GTRG 8GB
SK Hynix DDR2 800 2G 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
Kingston K531R8-MIN 4GB
G Skill Intl F4-3600C17-8GVK 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471A2K43CBCBCRC 16GB
Report a bug
×
Bug description
Source link