RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
31
Around 19% lower latency
Reasons to consider
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Report a bug
Faster reading speed, GB/s
16.2
16.1
Average value in the tests
Faster write speed, GB/s
11.2
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
31
Read speed, GB/s
16.1
16.2
Write speed, GB/s
10.1
11.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
2897
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB RAM comparisons
Samsung M378A1G43EB1-CPB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Kingston 99U5403-465.A00LF 8GB
Corsair CMD16GX4M2B3200C14 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905701-132.A00G 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2400C15-8GFT 8GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9905702-002.A00G 8GB
Kingston 99U5584-004.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3200C15-8GTZKY 8GB
Kingston 39P5429-006.AO01 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3200C15-16GTZSK 16GB
Kingston 99U5469-045.A00LF 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMK32GX4M4B3866C18 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9965640-004.C00G 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Kingston 9905403-444.A00LF 4GB
Samsung M378A2K43BB1-CPB 16GB
Report a bug
×
Bug description
Source link