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Samsung 1600 CL10 Series 8GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Samsung 1600 CL10 Series 8GB vs Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 77
    Around 68% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 13.1
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 5.5
    Average value in the tests
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB Reasons to consider
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 77
  • Read speed, GB/s
    16.1 left arrow 13.1
  • Write speed, GB/s
    10.1 left arrow 5.5
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 1440

Samsung 1600 CL10 Series 8GB RAM comparisons

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB RAM comparisons

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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