RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Compare
Samsung 1600 CL10 Series 8GB vs Micron Technology 36ASF2G72PZ-2G6E1 16GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
49
Around 49% lower latency
Faster reading speed, GB/s
16.1
9.8
Average value in the tests
Faster write speed, GB/s
10.1
8.4
Average value in the tests
Reasons to consider
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Report a bug
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
49
Read speed, GB/s
16.1
9.8
Write speed, GB/s
10.1
8.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
2277
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Team Group Inc. Team-Elite-1333 4GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
Samsung M395T2863QZ4-CF76 1GB
AMD R948G3206U2S 8GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMV32GX4M1A2666C18 32GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston 9905678-138.A00G 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Avant Technology J642GU42J9266N4 16GB
Samsung M393B5170FH0-CK0 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5428-040.A00LF 4GB
Kingston XG9XKG-MIE 16GB
Team Group Inc. Vulcan-1600 4GB
Corsair CMW16GX4M2C3200C16 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Kllisre 99P5428-002.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KKRVFX-MIE 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9905625-152.A00G 16GB
Kingston ACR512X64D3S13C9G 4GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Report a bug
×
Bug description
Source link