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Samsung 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB

Samsung 1600 CL10 Series 8GB vs Patriot Memory (PDP Systems) PSD416G21332S 16GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Patriot Memory (PDP Systems) PSD416G21332S 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 30
    Around 17% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 10.3
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 9.5
    Average value in the tests
Patriot Memory (PDP Systems) PSD416G21332S 16GB Reasons to consider
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 30
  • Read speed, GB/s
    16.1 left arrow 10.3
  • Write speed, GB/s
    10.1 left arrow 9.5
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 1651

Samsung 1600 CL10 Series 8GB RAM comparisons

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB RAM comparisons

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
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