RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Compare
Samsung 1600 CL10 Series 8GB vs Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
36
Around 31% lower latency
Reasons to consider
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Report a bug
Faster reading speed, GB/s
17.1
16.1
Average value in the tests
Faster write speed, GB/s
11.0
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
36
Read speed, GB/s
16.1
17.1
Write speed, GB/s
10.1
11.0
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
3009
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingmax Semiconductor GLAF62F-D8---------- 4GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3000C16-16GTZR 16GB
Samsung M378B5673EH1-CF8 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3000C16-16GISB 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Apacer Technology 78.DAGQ7.40B0B 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9965600-027.A01G 16GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMR16GX4M2D3000C16 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Samsung M395T2863QZ4-CF76 1GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
Samsung M378B5173BH0-CH9 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Report a bug
×
Bug description
Source link