RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Compare
Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB
Overall score
Samsung DDR3 8GB 1600MHz 8GB
Overall score
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Reasons to consider
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Report a bug
Below the latency in the PassMark tests, ns
38
43
Around -13% lower latency
Faster reading speed, GB/s
15
14.9
Average value in the tests
Faster write speed, GB/s
12.5
9.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
38
Read speed, GB/s
14.9
15.0
Write speed, GB/s
9.6
12.5
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2506
3005
Samsung DDR3 8GB 1600MHz 8GB RAM comparisons
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB RAM comparisons
PNY Electronics PNY 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-3200C16-8GTZKY 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Patriot Memory (PDP Systems) PSD44G213381 4GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-2133C15-8GRS 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
Samsung M471B5273CH0-CH9 4GB
Panram International Corporation W4U2666P-8G 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston HP26D4S9D8MJ-16 16GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMD16GX4M4A2800C16 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingston 9905700-072.A01G 16GB
Corsair VSA2GSDS667C4 2GB
Corsair CMSX16GX4M2A2666C18 8GB
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Samsung M3 78T5663EH3-CF7 2GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
Samsung M386B4G70DM0-CMA4 32GB
V-Color Technology Inc. TA48G36S818BN 8GB
Report a bug
×
Bug description
Source link