Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology 8ATF2G64HZ-3G2E2 16GB

Overall score

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Differences Specifications Comments

Differences

Samsung DDR3 8GB 1600MHz 8GB

Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB

Below the latency in the PassMark tests, ns

43 51

Around 16% lower latency

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Faster reading speed, GB/s

15.6 14.9

Average value in the tests
Faster write speed, GB/s

11.8 9.6

Average value in the tests
Higher memory bandwidth, mbps

25600 12800

Around 2 higher bandwidth

Specifications

Complete list of technical specifications

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

43 51
Read speed, GB/s

14.9 15.6
Write speed, GB/s

9.6 11.8
Memory bandwidth, mbps

12800 25600

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2506 2687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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