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Samsung DDR3 8GB 1600MHz 8GB
V-GEN D4M8GL26A8TS6 8GB
Compare
Samsung DDR3 8GB 1600MHz 8GB vs V-GEN D4M8GL26A8TS6 8GB
Overall score
Samsung DDR3 8GB 1600MHz 8GB
Overall score
V-GEN D4M8GL26A8TS6 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Below the latency in the PassMark tests, ns
43
63
Around 32% lower latency
Faster write speed, GB/s
9.6
8.8
Average value in the tests
Reasons to consider
V-GEN D4M8GL26A8TS6 8GB
Report a bug
Faster reading speed, GB/s
17
14.9
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
V-GEN D4M8GL26A8TS6 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
63
Read speed, GB/s
14.9
17.0
Write speed, GB/s
9.6
8.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2506
2061
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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