RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Crucial Technology CT8G4SFS824A.C8FE 8GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Crucial Technology CT8G4SFS824A.C8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
15.1
Average value in the tests
Faster write speed, GB/s
2,123.3
10.8
Average value in the tests
Reasons to consider
Crucial Technology CT8G4SFS824A.C8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
59
Around -84% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
32
Read speed, GB/s
4,833.8
15.1
Write speed, GB/s
2,123.3
10.8
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
2667
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology VDQVE1B16 2GB
Corsair CMR64GX4M4C3466C16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CM4X8GF2400C14K4 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Corsair CM4B16G2L2666A18K2 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Avant Technology W642GU42J5213N 16GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Samsung M393A4K40BB2-CTD 32GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-2800C15-16GVR 16GB
A-DATA Technology DQVE1908 512MB
Samsung M474A2K43BB1-CPB 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3600C14-8GVKA 8GB
Kingston KVT8FP-HYC 4GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
Kingston 99U5474-010.A00LF 2GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Report a bug
×
Bug description
Source link