RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
40
59
Around -48% lower latency
Faster reading speed, GB/s
9.1
4
Average value in the tests
Faster write speed, GB/s
6.9
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
40
Read speed, GB/s
4,833.8
9.1
Write speed, GB/s
2,123.3
6.9
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
2031
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-010.A00LF 2GB
Corsair CMW32GX4M2D3000C16 16GB
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology 78.CAGR9.40C0B 8GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Kingston 9905469-143.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Kingston 9905403-011.A03LF 2GB
Kingston MSI24D4S7S8S8-8 8GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMD32GX4M2B2800C14 16GB
Samsung M378B1G73QH0-CK0 8GB
Corsair CMK32GX4M4B3600C16 8GB
Kingston 99U5474-037.A00LF 4GB
Panram International Corporation W4U2666PS-8GC19 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3200C14-16GFX 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Report a bug
×
Bug description
Source link