RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
13.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
59
Around -103% lower latency
Faster write speed, GB/s
9.8
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
29
Read speed, GB/s
4,833.8
13.7
Write speed, GB/s
2,123.3
9.8
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
2407
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB RAM comparisons
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Qimonda 64T128020EDL2.5C2 1GB
Shenzhen Technology Co Ltd 8GB
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3600C16-8GTRGC 8GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology BLS16G4S240FSD.16FBD 16GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
Team Group Inc. UD5-6400 16GB
Kingston 9965589-006.E00G 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 99U5701-049.A00G 16GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Kingston 99U5403-465.A00LF 8GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Crucial Technology CT102464BF160B-16F 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung M392A4K40BM0-CRC 32GB
Report a bug
×
Bug description
Source link