RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Kingston HP37D4U1S8ME-16XR 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Kingston HP37D4U1S8ME-16XR 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Kingston HP37D4U1S8ME-16XR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
19.2
Average value in the tests
Faster write speed, GB/s
2,123.3
14.9
Average value in the tests
Reasons to consider
Kingston HP37D4U1S8ME-16XR 16GB
Report a bug
Below the latency in the PassMark tests, ns
34
59
Around -74% lower latency
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Kingston HP37D4U1S8ME-16XR 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
34
Read speed, GB/s
4,833.8
19.2
Write speed, GB/s
2,123.3
14.9
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
731
3527
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Kingston HP37D4U1S8ME-16XR 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-3200C16-8GFX 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Samsung M471B5173BH0-YK0 4GB
AMD R538G1601S2LS 8GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
AMD AE34G1601U1 4GB
G Skill Intl F4-2400C17-8GFT 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK16GX4M2Z2400C16 8GB
SK Hynix HMT425S6AFR6A-PB 2GB
AMD R948G3206U2S 8GB
Samsung M378B5273DH0-CH9 4GB
Teikon TMA81GS6CJR8N-VKSC 8GB
A-DATA Technology AD73I1B1672EG 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Samsung M378B1G73QH0-CK0 8GB
Kingston KVR16N11/8-SP 8GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Kingston 9905471-006.A01LF 4GB
SK Hynix HMA84GL7MMR4N-TF 32GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-2400C15-4GIS 4GB
Samsung M393B1K70QB0-CK0 8GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Report a bug
×
Bug description
Source link