RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Kingston KF3200C20S4/8G 8GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Kingston KF3200C20S4/8G 8GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Kingston KF3200C20S4/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
15.4
Average value in the tests
Faster write speed, GB/s
2,123.3
13.3
Average value in the tests
Reasons to consider
Kingston KF3200C20S4/8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
43
59
Around -37% lower latency
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Kingston KF3200C20S4/8G 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
43
Read speed, GB/s
4,833.8
15.4
Write speed, GB/s
2,123.3
13.3
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
731
2776
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Kingston KF3200C20S4/8G 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR26D4S9D8ME-16 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston XJ69DF-MIE 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Corsair CMK32GX5M2A4800C40 16GB
Samsung M471B5273DH0-CH9 4GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
A-DATA Technology ADOVE1A0834E 1GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Samsung M471A1K43BB1-CRC 8GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston 9905599-029.A00G 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shenzhen Technology Co Ltd 8GB
Samsung M471B5673FH0-CF8 2GB
Samsung M471A2K43CB1-CRCR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFS8213.M8FB 8GB
Report a bug
×
Bug description
Source link