RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 18ADF2G72AZ-2G3B1 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
13.7
Average value in the tests
Reasons to consider
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
59
Around -119% lower latency
Faster write speed, GB/s
9.9
2,123.3
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
27
Read speed, GB/s
4,833.8
13.7
Write speed, GB/s
2,123.3
9.9
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
2347
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMK32GX4M2C3000C16 16GB
G Skill Intl F3-2400C11-8GSR 8GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
Kingston KHX318C10FR/8G 8GB
Kingston ACR24D4S7D8MB-16 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
EVGA 8GX-D4-3000-MR 8GB
Kingston 99U5474-038.A00LF 4GB
Kingston 9905624-004.A00G 4GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMT32GX4M4C3200C14 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M393A1G40DB0-CPB 8GB
A-DATA Technology DQVE1908 512MB
Chun Well Technology Holding Limited MD4U1636181DCW 16G
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Panram International Corporation L421008G4C1528K34O8A 8
SK Hynix HMT325U6CFR8C-PB 2GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Report a bug
×
Bug description
Source link