RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863QZS-CF7 1GB
Samsung M474A1G43DB0-CPB 8GB
Compare
Samsung M3 78T2863QZS-CF7 1GB vs Samsung M474A1G43DB0-CPB 8GB
Overall score
Samsung M3 78T2863QZS-CF7 1GB
Overall score
Samsung M474A1G43DB0-CPB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863QZS-CF7 1GB
Report a bug
Reasons to consider
Samsung M474A1G43DB0-CPB 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
69
Around -156% lower latency
Faster reading speed, GB/s
9.7
4
Average value in the tests
Faster write speed, GB/s
6.8
1,857.7
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863QZS-CF7 1GB
Samsung M474A1G43DB0-CPB 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
69
27
Read speed, GB/s
4,217.2
9.7
Write speed, GB/s
1,857.7
6.8
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
668
1767
Samsung M3 78T2863QZS-CF7 1GB RAM comparisons
Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB
Samsung M474A1G43DB0-CPB 8GB RAM comparisons
Corsair CM5S16GM4800A40N2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP112S64CP6-S6 1GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Samsung M378B5173BH0-CH9 4GB
Aquarius Production Company LLC 16G-D4-2666-MR 4GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
Samsung M471B5173DB0-YK0 4GB
Kingston KF3200C16D4/16GX 16GB
Avant Technology F641GU67F9333G 8GB
Kingston KHX3200C20S4/8G 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Lexar Co Limited LD4AS016G-H2666G 16GB
G Skill Intl F3-2133C9-4GAB 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Samsung M471A1K43CB1-CRC 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Avant Technology F641GU67F9333G 8GB
Super Talent F24EB8GS 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston 9905713-001.A00G 4GB
Report a bug
×
Bug description
Source link