RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-2400C16-8GFXR 8GB
Compare
Samsung M3 78T2953EZ3-CF7 1GB vs G Skill Intl F4-2400C16-8GFXR 8GB
Overall score
Samsung M3 78T2953EZ3-CF7 1GB
Overall score
G Skill Intl F4-2400C16-8GFXR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
13.8
Average value in the tests
Reasons to consider
G Skill Intl F4-2400C16-8GFXR 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
58
Around -123% lower latency
Faster write speed, GB/s
9.2
1,950.7
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-2400C16-8GFXR 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
26
Read speed, GB/s
4,241.0
13.8
Write speed, GB/s
1,950.7
9.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
651
2456
Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-2400C16-8GFXR 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393A1G43DB0-CPB 8GB
Kingston KHX2400C11D3/4GX 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Samsung M3 78T5663RZ3-CF7 2GB
Mushkin MR[A/B]4U266GHHF8G 8GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9965589-031.D01G 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-4000C18-8GTRG 8GB
Samsung M471B5273DH0-CH9 4GB
Mushkin 99[2/7/4]191[F/T] 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3733C17-8GTZKW 8GB
A-DATA Technology DQKD1A08 1GB
Kingston KHX2666C16D4/4G 4GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-2400C16-8GFXR 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Report a bug
×
Bug description
Source link