RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2953EZ3-CF7 1GB
Gloway International (HK) STK4U2400D17041C 4GB
Compare
Samsung M3 78T2953EZ3-CF7 1GB vs Gloway International (HK) STK4U2400D17041C 4GB
Overall score
Samsung M3 78T2953EZ3-CF7 1GB
Overall score
Gloway International (HK) STK4U2400D17041C 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
Below the latency in the PassMark tests, ns
58
71
Around 18% lower latency
Faster reading speed, GB/s
4
15.8
Average value in the tests
Reasons to consider
Gloway International (HK) STK4U2400D17041C 4GB
Report a bug
Faster write speed, GB/s
7.9
1,950.7
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
Gloway International (HK) STK4U2400D17041C 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
71
Read speed, GB/s
4,241.0
15.8
Write speed, GB/s
1,950.7
7.9
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
651
1757
Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
Gloway International (HK) STK4U2400D17041C 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2953EZ3-CF7 1GB
Gloway International (HK) STK4U2400D17041C 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Apacer Technology 78.DAGQ7.40B0B 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3600C19-8GVSB 8GB
Protocol Engines Kingrock 800 2GB 2GB
Transcend Information AQD-SD4U4GN21-SG 4GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMT16GX4M2K4266C19 8GB
Kingston 9905403-038.A00LF 4GB
InnoDisk Corporation 16GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Apacer Technology 78.B1GQB.4010B 4GB
Report a bug
×
Bug description
Source link