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Samsung M3 78T2953EZ3-CF7 1GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB

Samsung M3 78T2953EZ3-CF7 1GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB

Overall score
star star star star star
Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Overall score
star star star star star
InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

Differences Specifications Comments

Differences

Samsung M3 78T2953EZ3-CF7 1GB Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    58 left arrow 85
    Around 32% lower latency
  • Faster reading speed, GB/s
    4 left arrow 11.3
    Average value in the tests
InnoDisk Corporation M4S0-4GSSNCIK 4GB Reasons to consider
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Report a bug
  • Faster write speed, GB/s
    6.0 left arrow 1,950.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    58 left arrow 85
  • Read speed, GB/s
    4,241.0 left arrow 11.3
  • Write speed, GB/s
    1,950.7 left arrow 6.0
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    651 left arrow 1118

Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons

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InnoDisk Corporation M4S0-4GSSNCIK 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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