RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BLS4G4D240FSA.8FBD 4GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
16.6
Average value in the tests
Reasons to consider
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
46
Around -100% lower latency
Faster write speed, GB/s
12.4
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
19200
3200
Around 6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
23
Read speed, GB/s
2,909.8
16.6
Write speed, GB/s
1,519.2
12.4
Memory bandwidth, mbps
3200
19200
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
241
2659
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965525-018.A00LF 4GB
Kingston 9905678-065.A00G 8GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
V-GEN D4H8GS24A8 8GB
Kingston 99U5471-020.A00LF 4GB
Corsair CMN32GX4M2Z3600C18 16GB
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-100.A00LF 8GB
Kingston 99U5469-045.A00LF 4GB
INTENSO 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
G Skill Intl F4-3200C16-16GVK 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2400C15-8GFT 8GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMH32GX4M2Z3600C18 16GB
A-DATA Technology DQKD1A08 1GB
DSL Memory D4SS12082SH21A-A 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
SK Hynix HMT41GU7BFR8C-RD 8GB
G Skill Intl F4-2133C15-8GRS 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP32D4U8S8ME-8X 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M471A1G44BB0-CWE 8GB
Report a bug
×
Bug description
Source link