RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4133C19-4GTZ 4GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-4133C19-4GTZ 4GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
G Skill Intl F4-4133C19-4GTZ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
19.5
Average value in the tests
Reasons to consider
G Skill Intl F4-4133C19-4GTZ 4GB
Report a bug
Below the latency in the PassMark tests, ns
19
46
Around -142% lower latency
Faster write speed, GB/s
14.9
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
17000
3200
Around 5.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4133C19-4GTZ 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
19
Read speed, GB/s
2,909.8
19.5
Write speed, GB/s
1,519.2
14.9
Memory bandwidth, mbps
3200
17000
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
241
3355
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
G Skill Intl F4-4133C19-4GTZ 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4133C19-4GTZ 4GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Maxsun MSD44G24Q3 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965589-013.A00G 8GB
Samsung M471B1G73QH0-YK0 8GB
Apacer Technology 78.D2GG7.AU30B 16GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 99U5712-002.A00G 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9905622-075.A00G 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK16GX4M2K4500C19 8GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3200C16-4GVKB 4GB
AMD R538G1601U2S 8GB
Transcend Information AQD-D4U4GN21-SG 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M392A4K40BM0-CRC 32GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK128GX4M4E3200C16 32GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3000C15-8GRRB 8GB
Kingston 99U5403-492.A00LF 8GB
AMD R748G2133U2S-UO 8GB
Report a bug
×
Bug description
Source link