RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
18.3
Average value in the tests
Reasons to consider
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
46
Around -70% lower latency
Faster write speed, GB/s
15.8
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
19200
3200
Around 6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
27
Read speed, GB/s
2,909.8
18.3
Write speed, GB/s
1,519.2
15.8
Memory bandwidth, mbps
3200
19200
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
241
3899
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
A-DATA Technology DDR4 2666 8GB
Corsair CM4B8G1L2666A18S4 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3600C14-8GTZNB 8GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3200C16-8GTRS 8GB
Apacer Technology 75.A73AA.G03 2GB
Kingston ACR21D4S15HAG/8G 8GB
SK Hynix HYMP112U64CP8-S5 1GB
A-DATA Technology DDR4 2400 16GB
Samsung M393B2G70BH0-CK0 16GB
Super Talent F24EB8GS 8GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C17-8GTZRB 8GB
PNY Electronics PNY 2GB
SK Hynix HMA851U6CJR6N-UH 4GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-3866C18-4GTZ 4GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK16GX4M4C3200C16 4GB
Report a bug
×
Bug description
Source link